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Flash and other non-volatile memory technologies are being developed by the Communication Technology Development and Manufacturing group. This group provides manufacturing process technologies and solutions for leading-edge wireless and network communication products. Intel is the leader in flash memory technology. Using flash technology and leading-edge logic process technology as a basis, Intel is expanding into a full range of process technologies providing unique leading-edge capabilities for the fast-growing communication products market segment.
As of June 2000, Intel has shipped 1 billion flash memory chips. It plans to reach the 2 billion mark in 2002.
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Flash + Logic + Analog Integration
Intel recently disclosed a new process technology that combines the core components of today�s cellular phones and handheld computers. This integrated, �wireless-Internet-on-a-chip� technology could enable a new era of wireless Internet-access products with extensive battery life and greater processing power. The new research chips combine Intel's leading-edge logic (microprocessor) and flash memory technologies and analog communications circuits on a single piece of silicon built using a single manufacturing process. Each of these types of circuits is traditionally manufactured on separate process technologies in different factories. Further information is included in the presentation dated May 17, 2001 below.
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Flash Memory Cell Scaling
Intel is developing the eighth generation of flash ETOX" memory technology at 0.13 micron lithography, and researching further scaling to the ninth and tenth generations at 0.10 micron and 0.07 micron. The goal is to reduce cell size by >50% for each generation through a combination of lithography, architecture, and material improvement.
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Intel StrataFlash® Memory
Intel pioneered StrataFlash memory by introducing the industry's first 2 bits/cell memory product. Intel's StrataFlash memory does not use error correction and fits into a standard memory application. Intel is continuing development to take it to the next level: 4 bits/cell, which will be the most cost-effective solid state reprogrammable memory.
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Ovonic Unified Memory
Intel has a joint development program with Ovonyx, Inc. ** to develop Ovonic phase change material for high performance non-volatile memory. Ovonic Unified Memory (OUM) is potentially capable of higher reprogrammable performance at lower voltage and lower power than ETOX, with a higher number of cycles.
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- "Future Trends in Non-Volatile Memory Technology"
(Acrobat PDF file, 1,613 KB)
Presenter: Stefan Lai
Event: Intel Developer Forum
Date: February 25-28, 2002
- "Ovonics Unified Memory � A High Performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications"
(Acrobat PDF file, 651 KB)
Presenter: Manzur Gill, Intel Corporation
Co-Authors: Tyler Lowrey, Ovonyx Inc.,** John Park, Azalea Corporation
Event: 2002 IEEE International Solid State Circuits Conference**
Date: February 4-6, 2002
- "Future Trends of Non-Volatile Memory Technology"
(Acrobat PDF file, 2315 KB)
Presenter: Stefan Lai
Event: Nikkei seminar **
Date: December 11, 2001
- "OUM - A 180 nm Non-Volatile Memory Cell Element Technology For Stand Alone and Embedded Applications"
(Acrobat PDF file, 421 KB)
Presenter: Stefan Lai, Intel Corporation
Co-Author: Tyler Lowrey, Ovonyx Inc. **
Event: 2001 International Electron Devices Meeting **
Date: December 5, 2001
- "A 130nm Generation High Density EtoxTM Flash Memory Technology"
(Acrobat PDF file, 588 KB)
Presenter: Stephen N. Keeney
Event: 2001 International Electron Devices Meeting**
Date: December 3, 2001
- "Intel�s Investigation of Next-Generation Memory Technologies for Portable Devices"
(Acrobat PDF file, 5,500 KB)
Presenter: Stefan Lai, Vice President, TMG, Intel Corp. Co-Director, California Technology and Manufacturing
Event: Press Briefing July 10, 2001
- "Intel Innovation: Wireless-Internet on-a-Chip Technology"
(Acrobat PDF file, 2093 KB)
Presenters: Al Fazio and Dennis Sheehan
Event: Announcement of Wireless-Internet-on-a-Chip Technology
Date: May 17, 2001
- "Intel Flash Memory"
(Acrobat PDF file, 1051 KB)
Presenter: Curt Nichols
Event: Bank of America Securities Conference, February 8, 2001
- "Flash Products Group, Intel Corporation: 1st Billion in 12 Years, 2nd Billion in 2 Years"
(Acrobat PDF file, 1699 KB)
Presenter: Curt Nichols
Date: June 6, 2000
- "World's First 0.18-Micron Flash Memory"
(Acrobat PDF file, 1320 KB)
Presenter: Troy Winslow
Date: April 17, 2000
- "Intel StrataFlash� Tutorial"
(Acrobat PDF file, 387 KB)
Event: StrataFlash introduction, 1997
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- "Ovonic Unified Memory - A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications"
(Acrobat PDF file, 731 KB)
Authors: Manzur Gill, Intel Corporation, Tyler Lowrey, Ovonyx Inc.,** John Park, Azalea Corporation
Event: 2002 IEEE International Solid State Circuits Conference**
Publication: Proceedings of 2002 IEEE International Solid State Circuits Conference, February 4-6, 2002
- "OUM - A 180 nm Non-Volatile Memory Cell Element Technology For Stand Alone and Embedded Applications"
(Acrobat PDF file, 460 KB)
Authors: Stefan Lai, Intel Corporation and Tyler Lowrey, Ovonyx Inc.**
Event: 2001 International Electron Devices Meeting**
Publication: Proceedings of IEEE International Electron Devices Meeting (IEDM), December 5, 2001
- "A 130nm Generation High Density EtoxTM Flash Memory Technology"
(Acrobat PDF file, 53 KB)
Presenter: Stephen N. Keeney
Event: 2001 International Electron Devices Meeting**
Publication: Proceedings of IEEE International Electron Devices Meeting (IEDM), December 3, 2001
- "Intel StrataFlash" Memory Technology Overview," Greg Atwood, Al Fazio, Duane Mills, Bill Reaves
**This link will take you off of the Intel Web site. Intel does not control the content of these linked Web sites.
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