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Flash and other non-volatile memory technologies are being developed by the Communication Technology Development and Manufacturing group. This group provides manufacturing process technologies and solutions for leading-edge wireless and network communication products. Intel is the leader in flash memory technology. Using flash technology and leading-edge logic process technology as a basis, Intel is expanding into a full range of process technologies providing unique leading-edge capabilities for the fast-growing communication products market segment.

As of June 2000, Intel has shipped 1 billion flash memory chips. It plans to reach the 2 billion mark in 2002.


Flash + Logic + Analog Integration

Intel recently disclosed a new process technology that combines the core components of today�s cellular phones and handheld computers. This integrated, �wireless-Internet-on-a-chip� technology could enable a new era of wireless Internet-access products with extensive battery life and greater processing power. The new research chips combine Intel's leading-edge logic (microprocessor) and flash memory technologies and analog communications circuits on a single piece of silicon built using a single manufacturing process. Each of these types of circuits is traditionally manufactured on separate process technologies in different factories. Further information is included in the presentation dated May 17, 2001 below.

Flash Memory Cell Scaling

Intel is developing the eighth generation of flash ETOX" memory technology at 0.13 micron lithography, and researching further scaling to the ninth and tenth generations at 0.10 micron and 0.07 micron. The goal is to reduce cell size by >50% for each generation through a combination of lithography, architecture, and material improvement.

Intel StrataFlash® Memory

Intel pioneered StrataFlash memory by introducing the industry's first 2 bits/cell memory product. Intel's StrataFlash memory does not use error correction and fits into a standard memory application. Intel is continuing development to take it to the next level: 4 bits/cell, which will be the most cost-effective solid state reprogrammable memory.

Ovonic Unified Memory

Intel has a joint development program with Ovonyx, Inc. ** to develop Ovonic phase change material for high performance non-volatile memory. Ovonic Unified Memory (OUM) is potentially capable of higher reprogrammable performance at lower voltage and lower power than ETOX, with a higher number of cycles.



**This link will take you off of the Intel Web site. Intel does not control the content of these linked Web sites.

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