ETOXTM Flash Memory Technology: Scaling and Integration Challenges
Al Fazio California Technology and Manufacturing, Intel Corporation
Stephen Keeney California Technology and Manufacturing, Intel Corporation
Stefan Lai California Technology and Manufacturing, Intel Corporation
Index Words: Flash memory, ETOXTM, Intel StrataFlash® memory, Moore's Law
Citation for this paper: Fazio, A.; Keeney, S.; Lai, S. "ETOXTM Flash Memory Technology: Scaling and Integration Challenges" Intel Technology Journal. http://developer.intel.com/technology/itj/2002/volume06issue02/ (May 2002).
The 0.13 mm flash memory technology that started high-volume manufacturing in the first quarter of 2002 is the eighth generation of flash technology since its first conception and development in 1983. The scaling has been accomplished by improved lithography capability as well as many process architecture innovations. In this paper, the key scaling challenges as well as the key innovations are presented. It is projected that the current planar cell structure can be scaled to the 65nm node. More revolutionary innovations, such as 3D structures, may be required for the 45nm node and beyond. To lower cost further, Intel StrataFlash® memory technology has been developed, which stores two bits of information in a single physical memory cell. The scaling innovations also allow for the integration of flash memories with high-performance logic for "wireless Internet on a chip" technology. These integration challenges are also discussed.
ETOX is a trademark of Intel Corporation or its subsidiaries in the United States and other countries.
StrataFlash is a registered trademark of Intel Corporation or its subsidiaries in the United States and other countries.