Integration of Mixed-Signal Elements into a High-Performance Digital CMOS Process
Kelin J. Kuhn Technology and Manufacturing Group, Intel Corporation
Shahriar Ahmed Technology and Manufacturing Group, Intel Corporation
Peter Vandervoorn Technology and Manufacturing Group, Intel Corporation
Anand Murthy Technology and Manufacturing Group, Intel Corporation
Borna Obradovic Technology and Manufacturing Group, Intel Corporation
Kartik Raol Technology and Manufacturing Group, Intel Corporation
Wei-kai Shih Technology and Manufacturing Group, Intel Corporation
Iwen Chao Intel Communications Group, Intel Corporation
Ian Post Technology and Manufacturing Group, Intel Corporation
Steve Chambers Technology and Manufacturing Group, Intel Corporation
Index Words: RF-CMOS, HBT, inductor
Citation for this paper: Kuhn, K. J., Ahmed, S., Vandervoorn, P., Murthy, A., Obradovic, B., Raol, K., Shih, W., Chao, I., Post, I., Chambers, S., "Integration of Mixed-Signal Elements into a High-Performance Digital CMOS Process."
Intel Technology Journal. http://developer.intel.com/technology/itj/2002/volume06issue02/ (May 2002).
ABSTRACT
The rapid increase in Internet communications' products such as high-speed switches, SerDes (serial-deserializer) elements and XAUI (X=10G, attachment unit interface) ports has energized the need for process technologies that support both digital and analog (mixed-signal) elements at radio frequencies (RF). In order for these products to be competitive, process technologies that support analog/mixed-signal and RF must heavily leverage the manufacturing benefits of conventional high-speed digital CMOS processes.
This paper reviews the challenges encountered when extending a high-speed conventional digital CMOS process to include analog/mixed-signal elements operating at RF frequencies.
|
Home Computing
